IRF 30A, V, Ohm, N-Channel. Power MOSFET. This N-Channel enhancement mode silicon gate power field effect transistor is designed, tested. DESCRIPTION. Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low. The IRF is a V single N-channel HEXFET® MOSFET hermetically sealed with extremely low on-resistance with high transconductance, superior reverse.
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